In　order　to　realize　the　ZnO　materials　better　in　the　application　of　the　photoelectric　devices,　this　paper　studies　the　Ag/Au　ohmic　contact　to　n-ZnO　thin　films.　Semiconductor　characteristic　analysis　system　is　used　to　measure　the　I-V　characteristic　curve.　Dig　disc　method　is　used　to　test　the　ohmic　contact　resistance　rate.　They　reflect　the　influence　of　annealing　temperature　on　the　contact　characteristics.　Auger　electron　spectroscopy　(AES)　is　used　to　study　the　microscopic　structure　of　ohmic　contact　finally.　The　results　show　that　Ag　(50　nm)/Au　(100　nm)　ohmic　contact　to　n-ZnO　thin　film　is　the　best　when　annealing　temperature　is　500　.　The　as-deposited　Ag/Au　scheme　shows　a　specific　contact　resistivity　of　2.3×10-2　Ω·cm-2.　And　the　lowest　specific　contact　resistivity　is　5.2×10-4　Ω·cm-2.　The　specific　contact　resistivity　shows　a　decreasing　tendency　with　the　annealing　temperature　up　to　500　.　However,　for　the　sample　annealed　above　600　,　the　I-V　curves　reveal　the　characteristics　of　local　bending,　which　shows　rectification　trends.　Interface　diffusions　and　reactions　induced　by　anneal　ing　treatment　are　found　to　be　responsible　for　the　decrease　of　ohmic　contact　resistivity　and　the　rectification　trends.　The　reflection　of　Ag/Au　characteristic　is　better　than　that　with　other　metal　depositions.