Evaluation of the drain-source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method - 文章详情页

作者：

Ma, Lin (Ma, Lin.) | Feng, Shiwei (Feng, Shiwei.) (学者：冯士维) | Zhang, Yamin (Zhang, Yamin.) | Deng, Bing (Deng, Bing.) | Yue, Yuan (Yue, Yuan.)

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摘要：

The　effect　of　drain-source　voltage　on　AlGaAs/InGaAs　PHEMTs　thermal　resistance　is　studied　by　experimental　measuring　and　simulation.　The　result　shows　that　AlGaAs/InGaAs　PHEMTs　thermal　resistance　presents　a　downward　trend　under　the　same　power　dissipation　when　the　drain-source　voltage　(VDS)　is　decreased.　Moreover,　the　relatively　low　VDSand　large　drain-source　current　(IDS)　result　in　a　lower　thermal　resistance.　The　chip-level　and　package-level　thermal　resistance　have　been　extracted　by　the　structure　function　method.　The　simulation　result　indicated　that　the　high　electric　field　occurs　at　the　gate　contact　where　the　temperature　rise　occurs.　A　relatively　low　VDSleads　to　a　relatively　low　electric　field,　which　leads　to　the　decline　of　the　thermal　resistance.　©　2014　Chinese　Institute　of　Electronics.

关键词：

Drain current Heat resistance Electric fields Aluminum gallium arsenide

作者机构：

[ 1 ] [Ma, Lin]Institute of Semiconductor Device Reliability Physics, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
[ 2 ] [Feng, Shiwei]Institute of Semiconductor Device Reliability Physics, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
[ 3 ] [Zhang, Yamin]Institute of Semiconductor Device Reliability Physics, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
[ 4 ] [Deng, Bing]Institute of Semiconductor Device Reliability Physics, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
[ 5 ] [Yue, Yuan]Institute of Semiconductor Device Reliability Physics, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China

通讯作者信息：

冯士维
[feng, shiwei]institute of semiconductor device reliability physics, college of electronic information and control engineering, beijing university of technology, beijing, china

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