This　paper　investigates　the　endurance　characteristics　of　Hf0.5Zr0.5O2　(HZO)　ferroelectric　field-effect　transistors　(FeFETs)　with　SiO2　and　Y2O3　interface　layers.　FeFETs　have　emerged　as　a　promising　candidate　for　high-density　ferroelectric　memory　development,　featuring　advantages　like　non-destructive　readout,　non-volatility,　and　high　stability.　Despite　the　advancements　in　HfO2-based　FeFETs,　their　endurance,　a　key　performance　indicator,　remains　a　challenge.　We　present　a　detailed　study　on　the　effects　of　program/erase　(P/E)　cycling　on　the　electrical　characteristics　of　HZO　FeFETs　with　SiO2　and　Y2O3　interface　layers,　highlighting　the　wake-up　and　fatigue　phenomena　observed.　Our　investigation　reveals　the　intrinsic　mechanisms　underlying　these　phenomena　and　the　impact　of　interface　layer　material　on　the　endurance　behavior　of　HZO　FeFETs.　©　Published　under　licence　by　IOP　Publishing　Ltd.