Investigation of AlGaN/GaN HEMT trap barrier height variation under mechanical stress and voltage stress - 文章详情页

作者：

Zhang, Yiqun (Zhang, Yiqun.) | Zhu, Hui (Zhu, Hui.) | Liu, Xing (Liu, Xing.) | Zhang, Zhirang (Zhang, Zhirang.)

收录：

EI Scopus

摘要：

The　variation　of　the　trap　barrier　height　of　AlGaN/GaN　high　electron　mobility　transistor　(HEMT)　under　the　mechanical　stress　and　voltage　stress　was　investigated.　It　was　found　that　the　compressive　stress　and　small　voltage　stress　mitigated　the　slowing　down　of　the　intra-layer　strain,　and　the　decrease　of　the　gate　leakage　current　was　related　to　the　increase　of　the　trap　barrier　height.　Tensile　stress　and　large　voltage　stress　exacerbated　the　intra-layer　strain,　and　the　additional　traps　due　to　the　inverse　piezoelectric　effect　caused　an　increase　in　the　gate　leakage　current,　which　was　verified　by　the　decrease　in　the　trap　barrier　height.　©　Published　under　licence　by　IOP　Publishing　Ltd.

关键词：

Compressive stress Gallium nitride Residual stresses Wide band gap semiconductors Gallium alloys Layered semiconductors Aluminum gallium nitride Leakage currents High electron mobility transistors III-V semiconductors Charge trapping

作者机构：

[ 1 ] [Zhang, Yiqun]Department of Electronic Information, Beijing University of Technology, Beijing, China
[ 2 ] [Zhu, Hui]Department of Electronic Information, Beijing University of Technology, Beijing, China
[ 3 ] [Liu, Xing]Department of Electronic Information, Beijing University of Technology, Beijing, China
[ 4 ] [Zhang, Zhirang]Department of Electronic Information, Beijing University of Technology, Beijing, China

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