The expression correction of transistor current gain and its application in reliability assessment - 文章详情页

作者：

收录：

EI Scopus CSCD

摘要：

Considering　the　impacts　of　ideal　factor　n,　VBEand　band　gap　changes　with　the　temperature　on　current　gain,　the　current　gain　expression　has　been　corrected　to　make　the　results　closer　to　the　actual　test.　Besides,　the　accelerating　lifetime　study　method　in　the　constant　temperature　-　humidity　stress　is　used　to　estimate　the　reliability　of　the　same　batch　transistors.　Applying　the　revised　findings　from　the　expression,　the　current　gains　before　and　after　the　test　are　compared　and　analyzed,　and,　according　to　the　degradation　data　of　the　current　gain,　the　transistor　lifetimes　in　the　test　stress　are　respectively　extrapolated　in　the　different　failure　criteria.　©　2014　Chinese　Institute　of　Electronics.

关键词：

Bipolar transistors Transistors Amplification Energy gap

作者机构：

[ 1 ] [Qi, Haochun]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
[ 2 ] [Qi, Haochun]Chinese People's Liberation Army 68129 Troops, Lanzhou, China
[ 3 ] [Zhang, Xiaoling]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
[ 4 ] [Xie, Xuesong]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
[ 5 ] [Zhao, Li]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
[ 6 ] [Chen, Chengju]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
[ 7 ] [Lü, Changzhi]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China

通讯作者信息：

[qi, haochun]chinese people's liberation army 68129 troops, lanzhou, china;;[qi, haochun]department of electronic information and control engineering, beijing university of technology, beijing, china

电子邮件地址：

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至