In　this　paper,　a　novel　SiC　superjunction　metal-oxide-semiconductor　field-effect　transistor　(MOSFET)　with　integrated　MOS　junction　barrier　Schottky　diode　(MJBS)　is　proposed,　in　which　the　n-pillar　is　directly　connected　to　the　source　electrode　to　form　a　Schottky　contact　at　the　top,　and　a　part　of　polycrystalline　silicon　is　connected　to　the　source　electrode　by　inserting　an　oxide　layer　in　the　centre　of　the　trench　gate　to　form　a　split　gate　and　a　body　diode　is　in　the　on　state　to　form　a　MOS　channel　electron　accumulation　layer,　electrons　can　easily　flow　from　the　n-pillar　into　the　source　contact,　and　the　turn-on　voltage　Vth　is　reduced　by　61.　3%　compared　to　a　superjunction　MOSFET　that　only　forms　a　Schottky　contact,　which　further　reduces　the　static　loss　of　the　built-in　diode　when　it　conducts.　The　conduction　of　the　Schottky　diode　during　reverse　recovery　is　enhanced.　As　a　result,　the　hole　injection　efficiency　of　the　body　diode　can　be　reduced,　thereby　lowering　the　reverse　recovery　charge　(Q(rr))　and　further　suppressing　reverse　recovery　oscillations.　Compared　with　the　parasitic　body　diode,　the　unipolar　conduction　generated　by　the　channel　diode　effectively　optimises　the　reverse　recovery　performance　and　switching　characteristics,　and　the　simulation　results　show　that　the　reverse　recovery　charge　(Q(rr))　and　peak　reverse　recovery　current　(I-rrm)　of　the　proposed　SJ　MOSFETs　are　reduced　by　about　74.9%　and　69.7%,　respectively,　and　the　total　switching　energy　loss　ESW　is　reduced　by　73.6%.