As　a　key　component　of　power　electronic　devices,　the　reliability　of　insulated　gate　bipolar　transistor　(IGBT)　modules　has　attracted　widespread　attention.　The　bond　wires　lift-off　is　the　primary　mode　of　failure　of　IGBT　modules,　and　it　results　in　a　change　in　the　electrothermal　characteristic　parameters,　including　current　density,　turn-on　voltage,　and　temperature.　So,　this　paper　investigates　the　impact　of　bonding　wires　lift-off　on　electrothermal　characteristic　parameters　of　IGBT　module.　Firstly,　A　simplified　IGBT　FE　(Finite　Element)　model　was　established.　And　electro-thermal　analysis　is　simulated　under　the　power　cycle　conditions.　The　birth　and　death　element　technique　were　then　used　to　build　these　FE　models　with　various　numbers　of　bond　wires.　The　results　of　the　simulations　of　these　models＇　electrothermal　characteristic　parameters　were　independently　recorded.　Finally,　analyzed　the　electrothermal　characteristic　parameters　of　IGBT　module　for　different　models.　The　analysis　results　show　that　the　current　density　on　the　chip-3,　the　maximum　temperature　and　turn-on　voltage　show　a　significant　increase　with　increase　of　bonding　wire　lift-off.　Compared　to　the　initial　state　of　no　wire-bond　break,　the　turn-on　voltage　increases　by　6.66%　when　the　seven　bond　wires　are　broken.　It　provides　some　valuable　guidance　for　further　study　on　the　reliability　of　the　bond-wire.