Research on preparation of quasi-phase-matched GaAs and pulsed CO2 laser frequency doubling - 文章详情页

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A　diffusion　bonding　method　of　quasi-phase-matched　(QPM)-GaAs　crystal　preparation　is　studied.　By　ultra-high　vacuum　pre-bonding-high　temperature　annealing　method,　the　preparation　of　three　quasi-phase-matched　crystals　is　completed　under　different　load　pressures.　The　polarization　period　length　of　the　QPM　structure　is　219　μm,　number　of　layers　is　44,　the　diameter　is　18　mm,　and　the　effective　aperture　is　15　mm.　The　best　transmittance　of　the　foundation　and　frequency　doubling　is　above　30%　without　anti-reflection　coating.　Using　transversely　excited　atmospheric　pressure　(TEA)-CO2　laser　with　90　ns　wide　main　pulse　and　2~6　μs　wide　tailing　as　foundation　source,　we　acquire　second　harmonic　generaction　(SHG)　output　with　efficiency　more　than　4%　on　4.63~5.37　μm　waveband　by　tuning　foundation　wavelength.　When　the　foundation　wavelength　is　10.68　μm,　main　pulse　energy　is　409　mJ,　the　density　in　QPM-GaAs　is　3.65　MW/cm2,　we　get　SHG　output　with　26.9　mJ　pulse　energy,　298　kW　peak　power,　and　the　SHG　efficiency　of　6.58%.

关键词：

Antireflection coatings Atmospheric pressure Carbon dioxide Carbon dioxide lasers Foundations Frequency doublers Gallium arsenide Harmonic generation III-V semiconductors Nonlinear optics Phase matching Pulsed lasers Reflective coatings Semiconducting gallium

作者机构：

[ 1 ] [Wang, Hao]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Hui, Yongling]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Jiang, Menghua]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Lei, Hong]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Li, Qiang]Institute of Laser Engineering, Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Huang, Wei]Institute of Electronics, Chinese Academy of Sciences, Beijing; 100190, China
[ 7 ] [Zheng, Yijun]Institute of Electronics, Chinese Academy of Sciences, Beijing; 100190, China
[ 8 ] [Tan, Rongqing]Institute of Electronics, Chinese Academy of Sciences, Beijing; 100190, China

通讯作者信息：

李强
[li, qiang]institute of laser engineering, beijing university of technology, beijing; 100124, china

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