• 综合
  • 标题
  • 关键词
  • 摘要
  • 学者
  • 期刊-刊名
  • 期刊-ISSN
  • 会议名称
搜索

作者:

Qi, Haochun (Qi, Haochun.) | Zhang, Xiaoling (Zhang, Xiaoling.) | Xie, Xuesong (Xie, Xuesong.) | Lü, Changzhi (Lü, Changzhi.)

收录:

EI Scopus CSCD

摘要:

According to the multi-performance degradation of the bipolar transistor in the accelerating storage process, an extrapolation model of the storage lifetime is proposed. In this model, using the Wiener process simulates the mono-degradation process of each feature degradation; using the copula function describes the correlation among these feature degradations. The Wiener process and parameters in the copula function are considered to associate with the temperature, and their relationships can be represented by the converted equations. Through the maximum likelihood estimation, the parameters in the Wiener process can be found; introducing Kendall's tau, those in the copula function can be estimated. By conducting the regression analyses of the estimated values of the parameters in each stress, their corresponding converted equations can be shown. Based on the storage test data of bipolar transistors, with the estimation method, the storage lifetime is found. The findings show that the model is reasonable for the prediction of storage lifetime. © 2014 Chinese Institute of Electronics.

关键词:

Digital storage Regression analysis Maximum likelihood estimation Parameter estimation Random processes Transistors

作者机构:

  • [ 1 ] [Qi, Haochun]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
  • [ 2 ] [Qi, Haochun]Chinese People's Liberation Army 68129 Troops, Lanzhou, China
  • [ 3 ] [Zhang, Xiaoling]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
  • [ 4 ] [Xie, Xuesong]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China
  • [ 5 ] [Lü, Changzhi]Department of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, China

通讯作者信息:

  • [qi, haochun]chinese people's liberation army 68129 troops, lanzhou, china;;[qi, haochun]department of electronic information and control engineering, beijing university of technology, beijing, china

电子邮件地址:

查看成果更多字段

相关关键词:

相关文章:

来源 :

Journal of Semiconductors

ISSN: 1674-4926

年份: 2014

期: 10

卷: 35

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 1

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 4

归属院系:

在线人数/总访问数:558/3908288
地址:北京工业大学图书馆(北京市朝阳区平乐园100号 邮编:100124) 联系我们:010-67392185
版权所有:北京工业大学图书馆 站点建设与维护:北京爱琴海乐之技术有限公司