This　study　investigates　the　p-GaN　gate　HEMT　with　Schottky　source　extension　(SSE)　for　improved　short-circuit　(SC)　reliability.　Under　higher　drain　bias,　the　SSE　pinches　off　and　functions　as　a　current　source,　resulting　in　reduced　saturation　current　(I-D,I-sat)　that　is　expected　to　enhance　the　short-circuit　reliability.　According　to　TCAD　simulation,　compared　to　other　approaches　(i.e.　reducing　V-GS　or　using　a　larger　L-G),　the　adoption　of　SSE　only　slightly　sacrifices　its　RON　for　a　targeted　(ID,sat).　Fabricated　devices　with　and　without　SSE　are　evaluated　for　SC　reliability.　The　high-voltage　pulse　I-D-V-DS　test　mimics　the　SC　stress,　and　the　new　device　with　SSE　can　endure　an　SC　pulse　with　much　higher　V-DS.　The　progressive　SC-stress/I-OFF　characterization　monitors　the　accumulative　SC　degradation　of　devices,　confirming　that　the　new　device　with　SSE　is　much　more　rugged　against　SC-stress.　Therefore,　the　proposed　p-GaN　gate　HEMT　with　SSE　offers　a　promising　approach　for　developing　SC-rugged　GaN　power　transistors　for　industrial　applications.