The　dynamic　R-ON　performance　of　GaN　power　devices　is　reported　to　degrade　after　hot-electron　stress,　due　to　the　generation　of　new　traps.　In　this　study,　the　p-GaN　gate　HEMTs　with　active　passivation　and　virtual　body　(AP/VB-HEMTs)　are　proposed　to　address　hot-electron　induced　dynamic　degradation.　The　active　passivation　is　a　thinned　p-GaN　layer　that　extends　from　the　gate　towards　the　drain.　The　virtual　body　is　a　hole　channel　above　a　buried　AlGaN　layer,　and　is　formed　by　holes　injected　from　gate.　As　a　result,　the　surface　trapping　caused　by　pre-existing　and　hot-electron　generated　traps　are　screened　by　the　active　passivation.　The　buffer　traps　are　suppressed　by　the　mobile　holes　in　virtual　body.　To　evaluate　the　effectiveness　on　suppressing　hot-electron　induced　dynamic　R-ON　degradation,　the　devices　are　evaluated　after　hot-electron　stress　with　different　stress　time　and　stress　current.　After　a　30-min　hot-electron　stress,　the　AP/VB-HEMT　shows　negligible　dynamic　R-ON　increase,　presenting　a　contrast　to　the　severe　degradation　in　conventional　p-GaN　gate　HEMT,　suggesting　the　enhanced　suppressions　against　hot-electron　stress　in　the　AP/VB-HEMT.