The　virtual-body　p-GaN　gate　HEMT　(VB-HEMT)　has　been　demonstrated　as　an　effective　method　to　suppress　buffer　trapping　induced　dynamic　R-ON　degradation.　The　buffer　trapping　is　fully　screened　by　virtual　body　which　is　formed　with　hole　injection　from　p-GaN　gate.　Therefore,　the　Ohmic-type　gate/p-GaN　contact　is　necessary　to　ensure　effective　hole　injection　to　form　virtual　body,　whereas　leading　to　limited　gate　swing.　In　this　study,　we　demonstrated　a　metal/insulator/p-GaN　gate　VB-HEMT　(MIP-VB-HEMT)　which　consists　of　a　main　transistor　and　a　p-GaN　potential　stabilizer　(PPS)　to　simultaneously　achieving　large　gate　swing　and　effective　hole　injection　for　the　formation　of　virtual　body.　In　the　proposed　device,　the　MIP-gate　blocks　additional　gate　voltage　and　thus　the　gate　swing　is　enlarged　to　20.4　V.　In　the　ON-state,　a　constant　gate　current　is　applied　by　the　PPS　to　ensure　hole　injection　to　form　the　virtual　body　and　screen　buffer　trapping.　Then,　the　screening　effects　on　buffer　trapping　are　verified　by　the　positive　back-gating　measurements.　As　a　result,　the　MIP-VB-HEMT　exhibits　both　improved　gate　swing　and　superior　dynamic　R-ON　performance.