Simulation study on single-event burnout of 550 v double RESURF SOI Lateral IGBT - 文章详情页

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EI Scopus

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Providing　an　additional　hole　extraction　path　can　significantly　enhance　the　resistance　to　single-event　radiation　of　SOI-LIGBT　devices.　This　paper　designs　a　550　V　Double　RESURF　SOI-LIGBT　device　and　studies　its　single-event　effects　through　simulation.　The　results　indicate　that　the　designed　NCSP-LIGBT　structure　significantly　improves　resistance　to　single-event　radiation　without　excessively　sacrificing　conduction　performance.　©　Published　under　licence　by　IOP　Publishing　Ltd.

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Radiation effects Insulated gate bipolar transistors (IGBT) Incident solar radiation

作者机构：

[ 1 ] [Zhao, Chongning]Beijing University of Technology, Beijing; 100124, China
[ 2 ] [Hu, Dongqing]Beijing University of Technology, Beijing; 100124, China
[ 3 ] [Zheng, Yuechao]Beijing University of Technology, Beijing; 100124, China
[ 4 ] [Jia, Yunpeng]Beijing University of Technology, Beijing; 100124, China
[ 5 ] [Zhou, Xintian]Beijing University of Technology, Beijing; 100124, China
[ 6 ] [Wu, Yu]Beijing University of Technology, Beijing; 100124, China
[ 7 ] [Tang, Yun]Beijing University of Technology, Beijing; 100124, China

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