Characterization of the Trap Evolution of GaN High-Electron-Mobility Transistors Under Off-State Stress - 文章详情页

作者：

Wen, Qian (Wen, Qian.) | Zheng, Xiang (Zheng, Xiang.) | Zhang, Yamin (Zhang, Yamin.) | Feng, Shiwei (Feng, Shiwei.)

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EI Scopus

摘要：

Under　the　effect　of　high　electric　field,　the　gallium　nitride　based　microwave　power　device　due　to　the　interface　defects　and　trapping　effect　will　intensify　material　damage.　This　is　an　important　factor　affecting　the　degradation　of　the　device＇s　electrical　parameters　in　high-power　and　high-frequency　applications.　In　this　paper,　by　applying　different　stresses　to　the　device,　the　trap　evolution　law　under　the　electrical　pulse　stress　is　analyzed,　and　the　influence　of　pulse　frequency　on　the　device　trap　evolution　and　the　device　degradation　mechanism　is　clear.　Under　off-state　pulse　stress,　the　device　degradation　increases　with　the　stress　pulse　frequency　due　to　inverse　piezoelectric　effects　and　gate　electron　injection.　©　2024　IEEE.

关键词：

Surface discharges Junction gate field effect transistors III-V semiconductors High electron mobility transistors Piezoelectricity Gallium nitride Stress analysis

作者机构：

[ 1 ] [Wen, Qian]Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China
[ 2 ] [Zheng, Xiang]Center for Device Thermography and Reliability, University of Bristol, Bristol, United Kingdom
[ 3 ] [Zhang, Yamin]Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China
[ 4 ] [Feng, Shiwei]Institute of Semiconductor Device Reliability Physics, Beijing University of Technology, Beijing, China

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