During　the　operation　of　IGBT　(Insulated　Gate　Bipolar　Transistor),　the　power　loss　and　junction　temperature　of　the　IGBT　module　vary　with　the　usage　conditions.　This　is　mainly　due　to　the　mismatch　in　thermal　expansion　coefficients　of　different　materials,　which　leads　to　thermal　stress　repeatedly　acting　on　the　solder　layer.　As　a　result,　the　solder　layer　may　fail.　Therefore,　investigating　solder　layer　damage　is　crucial　for　enhancing　the　reliability　of　IGBT　modules.　In　this　study,　a　three-dimensional　finite　element　model　of　the　IGBT　module　is　established.　The　damage　to　the　solder　layer　is　investigated　by　simulating　the　reduction　of　solder　layer　area　in　different　regions.　Specifically,　junction　temperature　(T-j),　and　maximum　temperature　(T-max)　of　various　IGBT　modules　under　power　cycle　conditions　are　recorded.　This　is　done　when　the　solder　layer　of　the　chip　and　copper　baseplate　is　separately　reduced　by　10%,　and　when　the　areas　of　both　solder　layers　are　simultaneously　reduced　by　10%.　Finally,　the　effects　of　solder　layer　damage　in　different　regions　on　T-j　and　T-max　are　analyzed.　The　results　obtained　through　finite　element　analysis　indicate　that　T-j　and　T-max　reach　their　maximum　values　when　the　areas　of　both　solder　layers　are　decreased　simultaneously.　Conversely,　T-j　and　T-max　are　minimized　when　the　area　of　the　copper　baseplate　solder　layer　is　reduced.　Moreover,　T-j　and　T-max　increase　as　the　area　of　the　solder　layer　decreases.