This　article　utilizes　Sentaurus　TCAD　software　to　simulate　and　analyze　neutron-induced　Single　Event　Burnout　(SEB)　of　a　4500V　Fast　Recovery　Diode　(FRD)　with　a　silicon-based　PIN　structure.　Initially,　the　diode　structure　is　modeled　to　accurately　represent　the　device＇s　electrical　characteristics.　The　resultant　SEB　simulation　reveals　a　significant　generation　of　electron-hole　pairs　near　the　trajectory　of　high-energy　particles,　leading　to　increased　electron　density　and　localized　device　temperature　rise.　Through　manipulation　of　biased　device　parameters,　it　is　determined　that　the　doping　concentration　and　width　of　the　buffer　layer　significantly　influence　the　SEB　occurrence　in　the　device.　Furthermore,　the　observation　of　electric　field　distribution　during　SEB　serves　to　validate　the　diode　burnout　mechanism.