In　this　paper,　effects　of　He+　and　H+　co-implantation　with　high　implantation　energy　on　surface　blisters　and　craters　at　different　annealing　conditions　are　systematically　investigated.　Surface　morphology　as　well　as　defect　microstructure　are　observed　and　analyzed　by　various　approaches,　such　as　scanning　electron　microscopy　(SEM),　optical　microscopy　(OM),　atomic　force　microscopy　(AFM),　and　Raman　spectroscopy.　It　is　found　that　after　500　degrees　C　annealing　and　above　for　1　h,　surface　blisters　and　exfoliation　are　observed　for　Si　and　SiO2-on-Si　wafers　except　for　the　samples　implanted　with　only　He+　ions.　AFM　images　reveal　that　the　heights　of　blisters　in　Si　and　SiO2-on-Si　wafers　are　432　nm　and　397　nm　respectively　and　the　thickness　of　transfer　layer　is　at　the　depth　of　about　1.4　mu　m,　which　is　consistent　with　the　projected　range　of　He+　and　H+　ions.　Raman　spectroscopy　demonstrates　that　higher　annealing　temperature　can　lead　to　a　stronger　intensity　of　the　VH2　peak.　Under　the　same　implantation　parameters,　surface　morphology　of　Si　and　SiO2-on-Si　wafers　is　different　after　annealing　process.　This　phenomenon　is　discussed　in　detail.