An　asymmetric　super　large　optical　cavity　waveguide　is　designed　to　realize　the　high　output　power　semiconductor　laser,　in　which　the　super　large　optical　cavity　is　used　to　raise　the　catastrophic　optical　mirror　damage　(COMD)　limit,　and　the　asymmetric　waveguide　is　used　to　inhibit　the　lasing　of　higher　order　modes.　Meanwhile,　the　optimized　thickness　of　the　asymmetric　waveguide　is　analyzed.　By　optimizing　the　process　condition　of　metal　organic　chemical　vapor　disposition　(MOCVD)　epitaxy　for　the　active　layer,　and　combining　with　the　electrode　fabrication　and　facet　coating,　a　4-mm　cavity　length　semiconductor　laser　die　with　2　μm　super　large　optical　cavity　waveguide　at　980　nm　wavelength　is　fabricated.　Without　any　active　cooling　process,　an　output　power　of　23.6　W　is　reached　with　injection　current　of　30　A　without　COMD　at　room　temperature.　Because　of　the　introducing　of　the　super　large　optical　cavity　waveguide,　the　far　field　test　shows　that　only　the　transverse　fundamental　mode　is　lased　with　a　vertical　far　field　angle　of　24°.　The　results　show　that　the　asymmetric　super　large　optical　cavity　structure　is　an　effective　way　to　get　the　high　output　power　of　semiconductor　laser.