0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA - 文章详情页

作者：

Lu, Zhiyi (Lu, Zhiyi.) | Xie, Hongyun (Xie, Hongyun.) | Huo, Wenjuan (Huo, Wenjuan.) | Zhang, Wanrong (Zhang, Wanrong.)

收录：

EI Scopus CSCD

摘要：

This　paper　presents　design　and　implementation　of　a　dual-band　LNA　using　a　0.35　μm　SiGe　HBT　process　for　0.9　GHz　GSM　and　2.4　GHz　WLAN　applications.　PCB　layout　parasitic　effects　have　a　vital　effect　on　circuit　performance　and　are　accounted　for　using　electro-magnetic　(EM)　simulation.　Design　considerations　of　noise　decoupling,　input/output　impedance　matching,　and　current　reuse　are　described　in　detail.　At　0.9/2.4　GHz,　gain　and　noise　figure　are　13/16　dB　and　4.2/3.9　dB,　respectively.　Both　S11　and　S22　are　below　-10　dB.　Power　dissipation　is　40　mW　at　3.5　V　supply.　©　2013　Chinese　Institute　of　Electronics.

关键词：

Polychlorinated biphenyls Heterojunction bipolar transistors

作者机构：

[ 1 ] [Lu, Zhiyi]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Xie, Hongyun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Huo, Wenjuan]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

通讯作者信息：

电子邮件地址：

luzhiyi213@yahoo.com.cn

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