• 综合
  • 标题
  • 关键词
  • 摘要
  • 学者
  • 期刊-刊名
  • 期刊-ISSN
  • 会议名称
搜索

作者:

Lu, Zhiyi (Lu, Zhiyi.) | Xie, Hongyun (Xie, Hongyun.) | Huo, Wenjuan (Huo, Wenjuan.) | Zhang, Wanrong (Zhang, Wanrong.)

收录:

EI Scopus CSCD

摘要:

This paper presents design and implementation of a dual-band LNA using a 0.35 μm SiGe HBT process for 0.9 GHz GSM and 2.4 GHz WLAN applications. PCB layout parasitic effects have a vital effect on circuit performance and are accounted for using electro-magnetic (EM) simulation. Design considerations of noise decoupling, input/output impedance matching, and current reuse are described in detail. At 0.9/2.4 GHz, gain and noise figure are 13/16 dB and 4.2/3.9 dB, respectively. Both S11 and S22 are below -10 dB. Power dissipation is 40 mW at 3.5 V supply. © 2013 Chinese Institute of Electronics.

关键词:

Heterojunction bipolar transistors Polychlorinated biphenyls

作者机构:

  • [ 1 ] [Lu, Zhiyi]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Xie, Hongyun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Huo, Wenjuan]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

通讯作者信息:

电子邮件地址:

查看成果更多字段

相关关键词:

相关文章:

来源 :

Journal of Semiconductors

ISSN: 1674-4926

年份: 2013

期: 2

卷: 34

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 2

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 2

归属院系:

在线人数/总访问数:2485/2917184
地址:北京工业大学图书馆(北京市朝阳区平乐园100号 邮编:100124) 联系我们:010-67392185
版权所有:北京工业大学图书馆 站点建设与维护:北京爱琴海乐之技术有限公司