Current　blocking　layer　(CBL)　was　used　to　improve　light　output　power　and　luminous　efficacy　of　the　LEDs　.The　structure　of　CBL　can　block　the　current　from　entering　the　active　region　below　the　top　contact.　The　shape　of　current　blocking　layer　impacts　properties　of　LEDs,　so　we　fabricate　different　kinds　of　SiO2　CBL　by　plasma　enhanced　chemical　vapor　deposition　(PECVD)　and　etched.　There　are　3　shapes　in　the　experiment:　Group　A　has　a　whole　structure　of　CBL　which　approximately　has　a　same　shape　of　top　metal　contact　laver,　group　B　is　a　Y-shaped　which　located　on　top　of　the　upper　confinement,　and　group　C　only　has　a　point-shaped　structure　under　the　metal　pad　electrode.　According　to　the　experiment,　we　obtain　that　the　difference　of　voltage　between　different　groups　is　not　too　large　in　low　power　LEDs,　when　CBL　and　P-electrode　have　the　same　shape,　the　LED　has　the　best　properties　and　by　14.6%　compared　to　that　of　conventional　LEDs.