InGaN/GaN　multiple-quantum　well　(MQW)　light-emitting　diodes　(LEDs)　were　fabricated,　in　which　a　SiO2　current　blocking　layer　(CBL)　was　inserted　underneath　the　p-pad　electrode.　Samples　were　divided　into　three　groups:　normal　surface,　surface　roughing,　and　surface　roughing　plus　side　wall　etching.　Each　group　had　two　different　structure　devices:　with　and　without　CBL.　In　each　group,　the　voltage　Vf　at　20　mA　for　the　LEDs　with　a　CBL　(Vf=3.156,　3.282,　3.284　V)　were　slightly　higher　than　those　of　without　CBL　(Vf=3.105,　3.205,　3.210　V).　However,　the　luminous　efficiency　and　the　light-output　power　of　the　LEDs　with　CBL　were　better　than　those　without　CBL.　At　20　mA　current,　the　output　power　of　the　LEDs　with　a　CBL　increase　10.20%,　12.19%,　11.49%　compared　with　those　without　CBL.　It　is　due　to　the　current　spreading　effect　in　CBL　devices.　The　CBL　can　also　reduce　parasitic　optical　absorption　in　the　p-pad　electrode.