ICP　(Inductively　Couple　Plasma)　etching　in　InAs/GaSb　type　II　superlattice　infrared　detector　material　with　Cl2/Ar　and　SiCl4/Ar　were　studied.　The　results　show　that　the　etching　depth　is　linear　with　etching　time　for　both　etching　gases.　The　etching　rate　is　100　nm/min　at　a　set　of　conditions:　RF　power　of　50　W,　SiCl4　flow　for　3　sccm,　Ar　to　9　sccm,　the　standard　operating　pressure　is　2　mTorr.　The　etching　rate　did　not　depend　on　the　doping　concentration.　The　Ar　flow　fluctuation　has　no　significant　effect　on　etching　rate　when　using　SiCl4/Ar　as　the　etch　gases.　But　this　condition　exists　in　Cl2/Ar,　especially　when　the　flow　of　Ar　under　3　sccm,　and　the　etching　rate　droped　with　the　reduction　of　Ar　flow.