ICP etching in InAs/GaSb type II superlattice infrared detector material - 文章详情页

作者：

Chen, Yongyuan (Chen, Yongyuan.) | Deng, Jun (Deng, Jun.) | Shi, Yanli (Shi, Yanli.) | Miao, Pei (Miao, Pei.) | Yang, Lipeng (Yang, Lipeng.)

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摘要：

ICP　(Inductively　Couple　Plasma)　etching　in　InAs/GaSb　type　II　superlattice　infrared　detector　material　with　Cl2/Ar　and　SiCl4/Ar　were　studied.　The　results　show　that　the　etching　depth　is　linear　with　etching　time　for　both　etching　gases.　The　etching　rate　is　100　nm/min　at　a　set　of　conditions:　RF　power　of　50　W,　SiCl4　flow　for　3　sccm,　Ar　to　9　sccm,　the　standard　operating　pressure　is　2　mTorr.　The　etching　rate　did　not　depend　on　the　doping　concentration.　The　Ar　flow　fluctuation　has　no　significant　effect　on　etching　rate　when　using　SiCl4/Ar　as　the　etch　gases.　But　this　condition　exists　in　Cl2/Ar,　especially　when　the　flow　of　Ar　under　3　sccm,　and　the　etching　rate　droped　with　the　reduction　of　Ar　flow.

关键词：

Antimony compounds Argon Chlorine compounds Etching Gallium compounds III-V semiconductors Indium antimonides Indium arsenide Infrared detectors Silicon compounds

作者机构：

[ 1 ] [Chen, Yongyuan]Laboratory of Beijing Photoelectron Technology, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Deng, Jun]Laboratory of Beijing Photoelectron Technology, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Shi, Yanli]Kunming Institute of Physics, Kunming 650223, China
[ 4 ] [Miao, Pei]Laboratory of Beijing Photoelectron Technology, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Yang, Lipeng]Laboratory of Beijing Photoelectron Technology, Beijing University of Technology, Beijing 100124, China

通讯作者信息：

电子邮件地址：

chenyongyuan@emails.bjut.edu.cn

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