In　the　manufacturing　processes　of　high-voltage　LED,　one　of　the　key　problems　in　high-voltage　LED　current　transport　is　current　leakage　and　open　circuit　caused　by　ICP　etching.　This　paper　mainly　analyzes　the　impact　of　ICP　etching　process　on　high-voltage　LED　in　different　ways,　such　as　current　leakage,　open　circuit　and　other　current　transport　problems.　We　mainly　discuss　the　depth　of　etching,　the　material　of　mask　and　isolation　channel　preparation　in　the　ICP　etching　process.　Random　samples　are　chosen　to　measure　electrical　properties　and　proceeding　SEM　micrographs.　By　comparing　the　electrical　properties　and　SEM　micrographs　with　different　process,　we　can　conclude　that　ICP　process　is　the　main　reason,　which　brings　the　problem　of　reliability　into　series-high-voltage　LED　array.　Finally,　the　properties　of　high-voltage　LED　have　been　improved　by　optimizing　the　ICP　etching　process　and　a　four　series　high-voltage　LED　with　excellent　current　transport　properties　is　got,　whose　forward　voltage　is　about　12　V　at　20　mA　current.