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作者:

Deng, Xu-Guang (Deng, Xu-Guang.) | Han, Jun (Han, Jun.) | Xing, Yan-Hui (Xing, Yan-Hui.) | Wang, Jia-Xing (Wang, Jia-Xing.) | Fan, Ya-Ming (Fan, Ya-Ming.) | Zhang, Bao-Shun (Zhang, Bao-Shun.) | Chen, Xiang (Chen, Xiang.)

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摘要:

High resistance GaN thin film was grown on sapphire (0001) substrates using metal-organic chemical vapor deposition (MOCVD). Effect of the GaN nucleation layer growth parameters, including reactor pressure, species of carrier gas and growth time, on the electrical characteristics of the following grown GaN buffer was investigated. It is found that GaN films epitaxially grown on the GaN nucleation layers deposited at a relatively lower pressure tend to have a high resistance.High resistance GaN buffer layer can also be prepared by extending growth time of the nucleation layer (i.e. increasing the thickness of nucleation layer) or by using N2 instead of H2 as carrier gas during the growth of nucleation layer. GaN layers with a sheet resistance as high as 2.49×1011 Ω/ was obtained. These layers were used as templates for the preparation of epi-wafers with AlGaN/AlN/GaN hetero structures, which were used to fabricate high electron mobility transistors (HEMTs). The highest mobility of these samples reaches to 1 230 cm2/(V·s).

关键词:

Aluminum gallium nitride Buffer layers Electron mobility Film preparation Gallium nitride High electron mobility transistors III-V semiconductors Metallorganic chemical vapor deposition Nucleation Organic chemicals Organometallics Sapphire Substrates

作者机构:

  • [ 1 ] [Deng, Xu-Guang]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 2 ] [Han, Jun]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 3 ] [Xing, Yan-Hui]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 4 ] [Wang, Jia-Xing]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China
  • [ 5 ] [Fan, Ya-Ming]Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • [ 6 ] [Zhang, Bao-Shun]Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • [ 7 ] [Chen, Xiang]Beijing Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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来源 :

Chinese Journal of Luminescence

ISSN: 1000-7032

年份: 2013

期: 3

卷: 34

页码: 351-355

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 2

ESI高被引论文在榜: 0 展开所有

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