Influence of AlN interfacial layer on electrical properties of AlGaN/AlN/GaN HEMT materials grown by MOCVD - 文章详情页

作者：

收录：

EI Scopus PKU CSCD

摘要：

AlGaN/AlN/GaN　high　electron　mobility　transistors　(HEMT)　structures　with　AlN　interfacial　layer　of　various　thicknesses　are　grown　by　metalorganic　chemical　vaper　deposition,　and　their　electrical　properties　are　investigated.　The　HEMT　sample　with　an　AlN　layer　thickness　of　about　1.5　nm　shows　a　highly　Hall　mobility　of　1680　cm2/Vs　with　a　low　sheet　resistance　of　310　Ω,　and　high　two-dimensional　electron　gas　(2DEG)　density　of　1.2×1013　cm-2　are　obtained　at　room　temperature,　indicating　good　electrical　properties　of　the　HEMT　material.　Furthermore,　the　results　from　atomic　force　microscopy　and　high　resolution　X-ray　diffraction　measurements　confirm　that　the　samples　possess　well　surface　morphology　and　heterostructure　interface.　Thence,　the　well　heterostructure　interface　enhances　the　2DEG　density　and　mobility　of　the　HEMT　materials.

关键词：

Aluminum gallium nitride Aluminum nitride Atomic force microscopy Carrier mobility Density of gases Electric properties Electron mobility Electrons Hall mobility High electron mobility transistors III-V semiconductors Materials Morphology Surface morphology Two dimensional electron gas X ray diffraction analysis

作者机构：

[ 1 ] [Chen, Xiang]Key Laboratory of Opto-Electronics Technology, College of Electronic Information and Control Engineer, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Xing, Yanhui]Key Laboratory of Opto-Electronics Technology, College of Electronic Information and Control Engineer, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Han, Jun]Key Laboratory of Opto-Electronics Technology, College of Electronic Information and Control Engineer, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Li, Yingzhi]Key Laboratory of Opto-Electronics Technology, College of Electronic Information and Control Engineer, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Deng, Xuguang]Key Laboratory of Opto-Electronics Technology, College of Electronic Information and Control Engineer, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Fan, Yaming]Suzhou Institute of Nano-Technology and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
[ 7 ] [Zhang, Xiaodong]Suzhou Institute of Nano-Technology and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
[ 8 ] [Zhang, Baoshun]Suzhou Institute of Nano-Technology and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

通讯作者信息：

电子邮件地址：

xingyanhui@bjut.edu.cn

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至