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作者:

Cheng, Chen (Cheng, Chen.) | Ning, Lixin (Ning, Lixin.) | Ke, Xiaoxing (Ke, Xiaoxing.) | Molokeev, Maxim S. (Molokeev, Maxim S..) | Wang, Zelin (Wang, Zelin.) | Zhou, Guojun (Zhou, Guojun.) | Chuang, Yu-Chun (Chuang, Yu-Chun.) | Xia, Zhiguo (Xia, Zhiguo.)

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EI Scopus SCIE

摘要:

Phosphor-converted white light-emitting diodes (LEDs) are currently playing key roles in the lighting and display industries and trigger urgent demands for the discovery of "good" phosphors with high quantum efficiency, improved thermal stability, and controllable excitation/emission properties. Herein, a general and efficient heterovalent substitution strategy is demonstrated in K2HfSi3O9:Eu2+ achieved by Ln(3+) (Ln = Gd, Tb, Dy, Tm, Yb, and Lu) doping to optimize luminescence properties, and as an example, the Lu3+ substitution leads to improvement of emission intensity and thermal stability, as well as tunable emission color from blue to cyan. The structural stability and Eu2+ occupation via Lu3+ doping have been revealed by the structural elaboration and density functional theory calculations, respectively. It is shown that heterovalent substitution allows predictive control of site preference of luminescent centers and therefore provides a new method to optimize the solid-state phosphors for LEDs.

关键词:

phosphors photoluminescence white light-emitting diodes

作者机构:

  • [ 1 ] [Cheng, Chen]Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China
  • [ 2 ] [Zhou, Guojun]Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China
  • [ 3 ] [Xia, Zhiguo]Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China
  • [ 4 ] [Ning, Lixin]Anhui Normal Univ, Minist Educ, Key Lab Funct Mol Solids, Anhui Key Lab Optoelect Mat Sci & Technol, Wuhu 241000, Anhui, Peoples R China
  • [ 5 ] [Ke, Xiaoxing]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 6 ] [Wang, Zelin]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing 100124, Peoples R China
  • [ 7 ] [Molokeev, Maxim S.]RAS, SB, KSC, Fed Res Ctr,Kirensky Inst Phys,Lab Crystal Phys, Krasnoyarsk 660036, Russia
  • [ 8 ] [Molokeev, Maxim S.]Siberian Fed Univ, Dept Engn Phys & Radioelect, Krasnoyarsk 660041, Russia
  • [ 9 ] [Molokeev, Maxim S.]Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia
  • [ 10 ] [Chuang, Yu-Chun]Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan
  • [ 11 ] [Xia, Zhiguo]South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China
  • [ 12 ] [Xia, Zhiguo]South China Univ Technol, Guangdong Prov Key Lab Fiber Laser Mat & Appl Tec, Guangzhou 510641, Guangdong, Peoples R China

通讯作者信息:

  • [Xia, Zhiguo]Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China;;[Ning, Lixin]Anhui Normal Univ, Minist Educ, Key Lab Funct Mol Solids, Anhui Key Lab Optoelect Mat Sci & Technol, Wuhu 241000, Anhui, Peoples R China;;[Xia, Zhiguo]South China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Guangdong, Peoples R China;;[Xia, Zhiguo]South China Univ Technol, Guangdong Prov Key Lab Fiber Laser Mat & Appl Tec, Guangzhou 510641, Guangdong, Peoples R China

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来源 :

ADVANCED OPTICAL MATERIALS

ISSN: 2195-1071

年份: 2019

期: 2

卷: 8

9 . 0 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:79

JCR分区:1

被引次数:

WoS核心集被引频次: 69

SCOPUS被引频次: 68

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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