GaN-based　blue　light-emitting　diodes　were　applied　bias　of　-400,　-800,　-1200　and　-1　500　V　electrostatic　discharge　in　human　body　mode.　The　electrical　and　optical　parameters　of　LED　were　characterized　before　and　after　electrostatic　discharge　stressing　with　the　theoretical　analysis　of　the　influence　of　electrostatic　on　LED　reliability.　After　human　body　mode　static　crack　down　on　the　GaN-based　blue　LED,　the　I-V　characteristic　curve　changed,　the　luminous　flux　reduced,　LED＇s　degradation　rate　was　also　accelerated.　It　is　deduced　that　the　LED　was　hit　by　electrostatic　generates　secondary　defects　and　melting　channel　inside　the　chip.　Based　on　the　result　of　I-V　characteristic　curve　at　different　temperature,　we　assumed　that　the　shallow　level　ionization　is　dominated　in　LED,　while　after　static　crack　down,　the　deep　level　ionization　is　dominant.　Therefore,　a　failure　mechanism　caused　by　electrostatic　can　be　deduced　as　follow.　The　generation　of　secondary　defects　and　melting　channel,　the　shallow　level/deep　level　carrier　movement　and　the　change　of　radiative/non-radiative　recombination,　cause　the　degradation　of　LED　performance.　These　find　make　great　efforts　to　understand　the　failure　mechanism　caused　by　the　electrostatic　discharge　and　anti-static　design.