Passively Q-switched Nd:YAG microchip laser based on graphene - 文章详情页

作者：

Cao, Yi (Cao, Yi.) | Liu, Jia (Liu, Jia.) | Liu, Jiang (Liu, Jiang.) | Wang, Pu (Wang, Pu.) (学者：王璞)

收录：

EI Scopus PKU CSCD

摘要：

A　design　passively　Q-switched　Nd:YAG　microchip　laser　based　on　graphene　saturable　absorber　is　presented.　A　thin　layer　of　graphene　is　sandwiched　between　the　Nd:YAG　crystal　and　YAG　crystal　closely,　and　dichroic　coatings　on　crystals　is　used　as　reflective　mirrors　for　the　plane　parallel　resonator.　The　Nd:YAG　crystal　is　end　pumped　by　a　fiber-coupled　laser　diode　via　a　lens　imaging　system.　Employing　graphene　as　saturable　absorber,　Q-switched　Nd:YAG　microchip　laser　is　realized　at　the　pump　power　threshold　of　1.17　W　with　laser　central　wavelength　of　1064.6　nm.　The　minimum　pulse　duration　is　75　ns　at　488　kHz　and　the　repetition　rate　is　tunable　from　300　to　807　kHz　with　the　increase　of　the　pump　power.　The　maximum　output　power　and　highest　pulse　energy　of　the　laser　measured　are　38.4　mW　and　54.7　nJ,　respectively.

关键词：

Graphene Lasers Microprocessor chips Neodymium lasers Optical pumping Pulse repetition rate Q switching Saturable absorbers Yttrium aluminum garnet

作者机构：

[ 1 ] [Cao, Yi]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Liu, Jia]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Liu, Jiang]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Wang, Pu]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China

通讯作者信息：

电子邮件地址：

wangpuemail@bjut.edu.cn

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至