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作者:

Zheng, Guangwei (Zheng, Guangwei.) | Wang, Jinshu (Wang, Jinshu.) (学者:王金淑) | Liu, Hu (Liu, Hu.) | Murugadoss, Vignesh (Murugadoss, Vignesh.) | Zu, Guannan (Zu, Guannan.) | Che, Haibing (Che, Haibing.) | Lai, Chen (Lai, Chen.) | Li, Hongyi (Li, Hongyi.) (学者:李洪义) | Ding, Tao (Ding, Tao.) | Gao, Qiang (Gao, Qiang.) | Guo, Zhanhu (Guo, Zhanhu.)

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摘要:

Hydrogen production from photoelectrochemical (PEC) water splitting using semiconductor photocatalysts has attracted great attention to realize clean and renewable energy from solar energy. The visible light response of WO3 with a long hole diffusion length (similar to 150 nm) and good electron mobility (similar to 12 cm(2) V-1 s(-1)) makes it suitable as the photoanode. However, WO3 suffers from issues including rapid recombination of photoexcited electron-hole pairs, photo-corrosion during the photocatalytic process due to the formation of peroxo-species, sluggish kinetics of photogenerated holes, and slow charge transfer at the semiconductor/electrolyte interface. This work highlights the approaches to overcome these drawbacks of WO3 photoanodes, including: (i) the manipulation of nanostructured WO3 photoanodes to decrease the nanoparticle size to promote hole migration to the WO3/electrolyte interface which benefits the charge separation; (ii) doping or introducing oxygen vacancies to improve electrical conductivity; exposing high energy crystal surfaces to promote the consumption of photogenerated holes on the high-active crystal face, thereby suppressing the recombination of photogenerated electrons and holes; (iii) decorating with co-catalysts to reduce the overpotential which inhibits the formation of peroxo-species; (iv) other methods such as coupling with narrow band semiconductors to accelerate the charge separation and controlling the crystal phase via annealing to reduce defects. These approaches are reviewed with detailed examples.

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作者机构:

  • [ 1 ] [Zheng, Guangwei]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Wang, Jinshu]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Zu, Guannan]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Che, Haibing]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 5 ] [Lai, Chen]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 6 ] [Li, Hongyi]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China
  • [ 7 ] [Zheng, Guangwei]Univ Tennessee, Dept Chem & Bimol Engn, ICL, Knoxville, TN 37996 USA
  • [ 8 ] [Murugadoss, Vignesh]Univ Tennessee, Dept Chem & Bimol Engn, ICL, Knoxville, TN 37996 USA
  • [ 9 ] [Guo, Zhanhu]Univ Tennessee, Dept Chem & Bimol Engn, ICL, Knoxville, TN 37996 USA
  • [ 10 ] [Liu, Hu]Zhengzhou Univ, Minist Educ, Natl Engn Res Ctr Adv Polymer Proc Technol, Key Lab Mat Proc & Mold, Zhengzhou 450002, Henan, Peoples R China
  • [ 11 ] [Murugadoss, Vignesh]Pondicherry Univ, Ctr Nanosci & Technol, Pondicherry 605014, India
  • [ 12 ] [Ding, Tao]Henan Univ, Coll Chem & Chem Engn, Kaifeng 475004, Henan, Peoples R China
  • [ 13 ] [Gao, Qiang]Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Scanning Probe Microscopy Grp, POB 2008, Oak Ridge, TN 37831 USA

通讯作者信息:

  • 王金淑

    [Wang, Jinshu]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Minist Educ, Beijing 100124, Peoples R China;;[Guo, Zhanhu]Univ Tennessee, Dept Chem & Bimol Engn, ICL, Knoxville, TN 37996 USA;;[Liu, Hu]Zhengzhou Univ, Minist Educ, Natl Engn Res Ctr Adv Polymer Proc Technol, Key Lab Mat Proc & Mold, Zhengzhou 450002, Henan, Peoples R China;;[Ding, Tao]Henan Univ, Coll Chem & Chem Engn, Kaifeng 475004, Henan, Peoples R China;;[Gao, Qiang]Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Scanning Probe Microscopy Grp, POB 2008, Oak Ridge, TN 37831 USA

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来源 :

NANOSCALE

ISSN: 2040-3364

年份: 2019

期: 41

卷: 11

页码: 18968-18994

6 . 7 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:123

JCR分区:1

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