Design of 3-6 GHz SiGe HBT cascode low noise amplifier - 文章详情页

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摘要：

Based　on　Jazz　0.35　μm　SiGe　process,　a　SiGe　HBT　low-noise　amplifier　(LNA)　for　UWB　and　IEEE　802.11a　application　is　presented.　The　technology　of　inductive　shunt　peaking　and　cascade　configuration　is　adopted　to　enhance　the　bandwidth.　Finally,　the　chip　layout　is　designed　with　its　area　1.16×0.78　mm2.　For　the　range　of　3-6　GHz　bandwidth,　the　maximum　power　gain　is　26.9　dB,　and　gain　flatness　is　±0.9　dB.　The　input　and　output　match　well,　input　and　output　reflections　(S11　and　S22)　are　both　less　than　-10　dB,　the　input　VSWR　and　output　VSWR　are　both　less　than　1.5,　and　the　1　dB　compression　point　is　-22.9　dBm.　The　LNA　is　unconditionally　stable　in　the　whole　band.

关键词：

Bandwidth Cascode amplifiers Heterojunction bipolar transistors Heterojunctions IEEE Standards Low noise amplifiers Si-Ge alloys

作者机构：

[ 1 ] [Ding, Chun-Bao]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Zhang, Wan-Rong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Xie, Hong-Yun]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Shen, Pei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Chen, Liang]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [You, Yun-Xia]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 7 ] [Sun, Bo-Tao]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 8 ] [Wang, Ren-Qing]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China

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电子邮件地址：

chunbaoding@emails.bjut.edu.cn

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