Thermal analysis of high power laser diodes with multiple emitters - 文章详情页

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The　transient　temperature　characteristics　of　high　power　laser　diode　(LD)　with　multiple　emitters　were　presented　and　discussed　in　this　paper.　The　transient　temperature　response　curves　were　measured　by　electrical　temperature　sensitive　parameter　method.　Structure　function　method　was　performed　to　evaluate　the　thermal　resistance　constitution　for　multiple　emitters　LD.　The　thermal　resistance　network　model　was　adopted　to　characterize　the　thermal　behavior　of　LDs　with　one,　two　and　four　emitters　respectively.　The　experiment　result　shows　that　chip　level　thermal　resistance　of　multiple　emitters　LD　decreases　in　proportion　to　the　number　of　emitters,　while　the　package　level　thermal　resistance　remains　unchangeable.　The　study　provides　an　important　reference　for　the　thermal　design　of　multiple　emitters　LD.

关键词：

Diodes Heat resistance High power lasers Semiconductor lasers Temperature Thermoanalysis

作者机构：

[ 1 ] [Li, Jingwan]Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Feng, Shiwei]Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Zhang, Guangchen]Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Xiong, Cong]Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Qiao, Yanbin]Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Guo, Chunsheng]Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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lijingwan@yahoo.com.cn

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