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Based on the Taiwan Semiconductor Manufactory Company (TSMC)'s 0.35 μm silicon germanium (SiGe) process, an inductorless, small chip area SiGe heterojunction bipolar transistor(HBT) low-noise amplifier (LNA) for Ultra-wideband (UWB) application was designed. The input impedance matching and the output impedance matching of the LNA are both achieved by using the resistance feedback structure instead of the LC matching network structure in order to save the chip area. And the LNA uses the Darlington-Cascode structure as its output stage to improve its gain and linearity because the structure has the advantage of high linearity of Cascode and the advantage of high gain of Darlington. The Darlington-Cascode structure was constructed based on the analysis of the linearity and 3-dB bandwidth of Cascode. The topology and the chip layout of the LNA were designed, with its area being only 0.046 mm2. The simulation results of the LNA demonstrate that in the range of UWB, the gain of a LNA is 19.5~20 dB, the gain flatness is ±0.25 dB, the linearity is -5~-2 dBm, with the satisfactory input impedance matching and the output impedance matching. The LNA is unconditionally stable in the whole band.
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