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作者:

Ding, Chunbao (Ding, Chunbao.) | Zhang, Wanrong (Zhang, Wanrong.) (学者:张万荣) | Jin, Dongyue (Jin, Dongyue.) | Xie, Hongyun (Xie, Hongyun.) | Chen, Liang (Chen, Liang.) | Shen, Pei (Shen, Pei.) | Zhang, Donghui (Zhang, Donghui.) | Liu, Boyu (Liu, Boyu.) | Zhou, Yongqiang (Zhou, Yongqiang.) | Guo, Zhenjie (Guo, Zhenjie.)

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EI Scopus PKU CSCD

摘要:

Based on the Taiwan Semiconductor Manufactory Company (TSMC)'s 0.35 μm silicon germanium (SiGe) process, an inductorless, small chip area SiGe heterojunction bipolar transistor(HBT) low-noise amplifier (LNA) for Ultra-wideband (UWB) application was designed. The input impedance matching and the output impedance matching of the LNA are both achieved by using the resistance feedback structure instead of the LC matching network structure in order to save the chip area. And the LNA uses the Darlington-Cascode structure as its output stage to improve its gain and linearity because the structure has the advantage of high linearity of Cascode and the advantage of high gain of Darlington. The Darlington-Cascode structure was constructed based on the analysis of the linearity and 3-dB bandwidth of Cascode. The topology and the chip layout of the LNA were designed, with its area being only 0.046 mm2. The simulation results of the LNA demonstrate that in the range of UWB, the gain of a LNA is 19.5~20 dB, the gain flatness is ±0.25 dB, the linearity is -5~-2 dBm, with the satisfactory input impedance matching and the output impedance matching. The LNA is unconditionally stable in the whole band.

关键词:

Analog circuits Broadband amplifiers Cascode amplifiers Electric impedance measurement Feedback amplifiers Heterojunction bipolar transistors Heterojunctions Impedance matching (electric) Low noise amplifiers Si-Ge alloys Transistors Ultra-wideband (UWB)

作者机构:

  • [ 1 ] [Ding, Chunbao]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Jin, Dongyue]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Xie, Hongyun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 5 ] [Chen, Liang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 6 ] [Shen, Pei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 7 ] [Zhang, Donghui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 8 ] [Liu, Boyu]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 9 ] [Zhou, Yongqiang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
  • [ 10 ] [Guo, Zhenjie]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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来源 :

Chinese High Technology Letters

ISSN: 1002-0470

年份: 2012

期: 10

卷: 22

页码: 1070-1076

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 2

ESI高被引论文在榜: 0 展开所有

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