Based　on　Jazz　0.35　μm　SiGe　process,　a　SiGe　HBT　low-noise　amplifier　(LNA)　for　2G,　3G　and　WIMAX　application　is　presented.　Taking　advantage　of　the　characteristics　of　low　input　impedance　of　common　base　transistor　and　low　output　impedance　of　common　collector　transistor,　active　match　in　input　and　output　is　achieved　by　selecting　the　structure　and　bias　current　of　transistors.　The　chip　area　with　pad　is　only　0.33　mm×0.31　mm　because　the　large　area　inductor　is　not　used.　Because　the　noise　figure　of　the　common　base　transistor　is　higher　than　that　of　the　common　emitter　transistor,　the　adoption　of　noise　cancellation　reduces　the　noise　introduced　from　the　common　base　transistor.　In　the　bandwidth　of　0.6-3　GHz,　the　LNA　shows　that　the　gain　is　17.8-19.2　dB,　gain　flatness　is　±0.9　dB,　the　input　and　output　match　well,　input　and　output　reflections　(S11　and　S22)　are　both　less　than　-10　dB,　and　the　LNA　is　unconditionally　stable　in　the　whole　band.