InGaN/GaN-based　blue　and　green　light　emitting　diodes　(LEDs)　were　under　an　aging　with　DC　current　of　900　mA　at　room　temperature.　The　tunneling　current　was　minimum　after　24　h　and　6　h　for　blue　and　green　LED　due　to　the　thermal　annealing　effect　which　reduced　defects.　At　the　same　time,　the　leakage　current　was　minimum　and　light　output　was　maximum.　Then　the　leakage　current　increased　and　luminous　flux　reduced　for　green　LED.　The　thermal　annealing　effect　and　defect　generation　were　proposed　as　positive　and　negative　accelerating　factor,　respectively.　The　negative　accelerating　factor　of　green　LED　increased　quicker　than　that　of　blue　LED　and　green　LED　decreased　seriously.　The　results　of　analysis　have　a　certain　reference　value　for　the　improve　of　GaN　LED.