Single-event　effects　(SEEs)　in　a　650-V　state-of-the-art　SiC　double-trench　MOSFET　(DT-MOS)　are　investigated　using　the　Sentaurus　TCAD　tools.　The　safe　operation　areas　(SOAs)　for　single-event　burnout　(SEB)　and　single-event　gate　rupture　(SEGR)　are　extracted　when　heavy　ions　with　different　linear　energy　transfer　(LET)　impact　the　sensitive　regions　of　the　device.　The　results　show　that　the　radiation　performance　of　the　SiC　DT-MOS　is　poor　because　of　the　very　low　threshold　voltages　of　failures　at　a　high　LET　range.　Moreover,　hardening　measures,　such　as　introducing　a　buffer　layer　and　adjusting　the　mesa　width,　are　discussed　to　assess　their　versatility.　It　is　demonstrated　that　in　contrast,　the　SEGR　problem　is　more　severe　due　to　the　intrinsic　properties　of　SiC　devices.　Therefore,　it　becomes　a　crucial　issue　to　find　ways　more　suitable　for　the　SiC　DT-MOS　to　avoid　gate　oxide　pre-breakdown,　before　they　could　serve　as　a　replacement　of　Si　counterparts　in　space　applications.