Flip-chip AlGaInP LEDs with current-guiding structure - 文章详情页

作者：

Li, Chuanchuan (Li, Chuanchuan.) | Guan, Baolu (Guan, Baolu.) | Hao, Congxia (Hao, Congxia.) | Guo, Xia (Guo, Xia.) (学者：郭霞)

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摘要：

A　new　flip-chip　AlGaInP　LED　with　current-guiding　structure　is　designed.　Experimental　results　show　that　the　output　optical　power　increases　by　17.33%　than　that　of　the　ordinary　flip-chip　AlGaInP　LED　with　a　voltage　of　2.19　V　at　the　injection　current　of　20　mA.　Through　the　current-guiding　structure,　the　injection　current　of　device　is　actively　guided　outside　of　the　electrodes,　effectively　increasing　the　effective　carrier　number　for　luminescence　in　the　active　area　outside　the　electrode,　while　reducing　the　current　crowding　phenomenon.　This　greatly　improves　the　optical　efficiency　of　the　device.

关键词：

Aluminum alloys Electrodes Flip chip devices Gallium alloys III-V semiconductors Indium alloys Light emitting diodes Optoelectronic devices Semiconductor alloys

作者机构：

[ 1 ] [Li, Chuanchuan]Photonic Device Research Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Guan, Baolu]Photonic Device Research Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Hao, Congxia]Photonic Device Research Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Guo, Xia]Photonic Device Research Laboratory, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

通讯作者信息：

电子邮件地址：

beryl1025@emails.bjut.edu.cn

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