The　silicon　thin　films　were　prepared　with　different　substrate　temperatures　and　different　hydrogen　dilution　ratios　by　using　HWAMWECR-CVD　method.　The　phase　transition　process　from　amorphous　to　microcrystalline　silicon　and　photo-electronic　properties　were　studied.　The　experimental　results　showed　that　when　the　silicon　thin　films　were　prepared　at　low　temperatures,　both　of　improving　the　substrate　temperature　and　hydrogen　dilution　ratio　played　important　roles,　but　the　influence　of　hydrogen　dilution　ratio　was　more　obvious　than　that　of　substrate　temperature;　higher　microcrystalline　volume　fraction　didn＇t　represent　higher　photo-electronic　properties.　In　the　experiment,　high-quality　μc-Si:H　thin　films　were　prepared　at　95%　hydrogen　dilution　ratio.