Nanosecond laser and mechanism primary analysis of Si-cell optoeletric conversion efficiency - 文章详情页

作者：

Hu, Chuanxin (Hu, Chuanxin.) | Ma, Jianchun (Ma, Jianchun.) | Huang, Jiqiang (Huang, Jiqiang.) | Liu, Ying (Liu, Ying.) | Shen, Chen (Shen, Chen.)

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EI Scopus PKU CSCD

摘要：

The　conical　microstructures　formed　on　the　surface　of　Si-wafer　in　SF6　and　upon　irradiation　with　train　of　6　ns　laser　pulses　with　a　wavelength　of　1064　nm　was　described.　The　Si　cell　optoelectric　conversion　efficiency　of　the　sample　which　is　laser　treatment　(sample　1)　and　without　laser　treatment　(sample　2)　compared　with　sample　1　were　measured,　the　conversion　efficiency　of　sample　2　increased　up　to　10%-15%.　Primary　analysis　the　mechanism　of　the　changes,　it　possible　relates　to　binding　energy　of　surfeit　electron　and　Fermi　level.　Find　application　of　the　Si-wafer　laser　treatment　the　Si　cell　technology　can　further　improve.

关键词：

Binding energy Cells Conversion efficiency Cytology Laser applications Silicon compounds Silicon wafers

作者机构：

[ 1 ] [Hu, Chuanxin]School of Material Science and Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Ma, Jianchun]Bur. of In-house Logistics State-owned Assets Supervision and Admin. Commission of the State Council, Beijing 100053, China
[ 3 ] [Huang, Jiqiang]Opto-Mechatronic Equipment Technology Beijing Area Major Laboratory, Beijing Institute of Petrochemical Technology, Beijing 102617, China
[ 4 ] [Liu, Ying]School of Environment and Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Shen, Chen]School of Environment and Engineering, Beijing University of Technology, Beijing 100124, China

通讯作者信息：

电子邮件地址：

huchuanxin@bjut.edu.cn

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