In　order　to　improve　the　light　efficiency　of　the　conventional　GaN-based　light-emitting　diodes　(LEDs),　the　indium　tin　oxide　(ITO)　film　is　introduced　as　the　current　spreading　layer　and　the　light　anti-reflecting　layer　on　the　p-GaN　surface.　There　is　a　big　problem　with　the　ITO　thin　film＇s　corrosion　during　the　electrode　preparation.　In　this　paper,　at　least,　the　edge　of　the　ITO　film　was　lateral　corroded　3.5　μm　width,　i.e.　6.43%-1/3　of　ITO　film＇s　area.　An　optimized　simple　process,　i.e.　inductively　couple　plasma　(ICP),　was　introduced　to　solve　this　problem.　The　ICP　process　not　only　prevented　the　ITO　film　from　lateral　corrosion,　but　also　improved　the　LED＇s　light　intensity　and　device　performance.　The　edge　of　the　ITO　film　by　ICP　dry　etching　is　steep,　and　the　areas　of　ITO　film　are　whole.　Compared　with　the　chip　by　wet　etching,　the　areas　of　light　emission　increase　by　6.43%　at　least　and　the　chip＇s　lop　values　increase　by　45.9%　at　most.