Improved extraction efficiency of AlGaInP light emitting diodes by nano-scale surface roughness - 文章详情页

作者：

Chen, Yi-Xin (Chen, Yi-Xin.) | Sheng, Guang-Di (Sheng, Guang-Di.) | Meng, Li-Li (Meng, Li-Li.) | Ma, Li (Ma, Li.) (学者：李明爱) | Li, Chun-Wei (Li, Chun-Wei.)

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EI Scopus PKU CSCD

摘要：

The　reason　for　low　extraction　efficiency　of　AlGaInP　light　emitting　diodes　(LEDs)　has　been　analyzed,　and　there　is　a　significant　gap　between　the　internal　efficiency　of　LEDs　and　their　external　efficiency.　The　reason　is　the　narrow　escape　cone　for　light　in　high　refractive　index　semiconductors.　The　application　of　nano-imprint　lithography　to　AlGaInP　based　LEDs＇　surface　texturing　has　been　done,　which　is　much　easier　for　light　to　escape　from　the　LED　structure　and　thereby　avoids　absorption.　In　this　paper,　we　have　demonstrated　nearly　100%　improvement　of　luminous　intensity　in　the　nano-surface　LEDs　compared　with　LEDs　with　a　flat　surface.　LEDs　with　nano-surface　have　higher　extraction　efficiency,　lower　heat　generated　and　better　optical　characteristics　than　LEDs　with　a　flat　surface.

关键词：

Diodes Efficiency Extraction Light emission Light emitting diodes Nanoimprint lithography Refractive index Semiconductor diodes Surface roughness

作者机构：

[ 1 ] [Chen, Yi-Xin]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Sheng, Guang-Di]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Meng, Li-Li]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Ma, Li]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Li, Chun-Wei]Optoelectronic Technology Laboratory, Beijing University of Technology, Beijing 100124, China

通讯作者信息：

电子邮件地址：

chenyixin_410@emails.bjut.edu.cn

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