The characteristics of high power LED at low and high temperature - 文章详情页

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In　this　paper,　the　high　power　GaN-based　white　and　blue　light-emitting　diodes　(LEDs)　and　AlGaInP-based　red　and　yellow　LEDs　are　fabricated　and　the　electrical　and　optical　properties　at　low　and　high　temperature　are　measured.　The　temperature　dependence　of　forward　voltage,　relative　luminous　intensity,　wavelength,　color　temperature　of　different　LEDs　are　analyzed.　Experiment　result　shows　that　temperature　has　great　influence　on　electrical　and　optical　proprieties　of　high-power　LEDs.　When　the　forward　voltage　increased　and　peak　wavelength　blue-shift　was　observed　with　decreasing　temperature.　At　high　temperature,　the　optical　power　of　LEDs　decreases　rapidly　and　the　peak　wavelength　becames　red-shift.

关键词：

Blue shift Gallium nitride III-V semiconductors Light emitting diodes Red Shift Temperature distribution

作者机构：

[ 1 ] [Guo, Wei-Ling]Key Laboratory of Opto-Electronics Technology of Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Li, Rui]Key Laboratory of Opto-Electronics Technology of Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Jia, Xue-Jiao]Key Laboratory of Opto-Electronics Technology of Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Gao, Wei]Key Laboratory of Opto-Electronics Technology of Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Cui, De-Sheng]Key Laboratory of Opto-Electronics Technology of Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Shen, Guang-Di]Key Laboratory of Opto-Electronics Technology of Ministry of Education, College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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