Study on sidewall etching damage of GaAs-based photonic crystal - 文章详情页

作者：

Liu, Ying-Ming (Liu, Ying-Ming.) | Xu, Chen (Xu, Chen.) (学者：徐晨) | Wang, Bao-Qiang (Wang, Bao-Qiang.) | Xie, Yi-Yang (Xie, Yi-Yang.) | Shen, Guang-Di (Shen, Guang-Di.)

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摘要：

In　order　to　study　the　sidewall　damage　of　photonic　crystal,　photonic　crystal　was　fabricated　by　different　ICP　etching　parameters.　With　the　increasing　bias　power　source.　The　roughness　of　sidewall　and　bottom　increased.　When　C2H4　were　added,　smooth　and　steep　sidewall　of　photonic　crystal　were　achieved　by　optimizing　the　parameters　of　ICP　at　last,　and　the　EBSD　analysed　the　etching　damage　preliminarily.

关键词：

Etching Gallium arsenide III-V semiconductors Photonic crystals Semiconducting gallium

作者机构：

[ 1 ] [Liu, Ying-Ming]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100124, China
[ 2 ] [Xu, Chen]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100124, China
[ 3 ] [Wang, Bao-Qiang]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100124, China
[ 4 ] [Xie, Yi-Yang]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100124, China
[ 5 ] [Shen, Guang-Di]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100124, China

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