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[期刊论文]

Study on sidewall etching damage of GaAs-based photonic crystal

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Author:

Liu, Ying-Ming (Liu, Ying-Ming.) | Xu, Chen (Xu, Chen.) (Scholars:徐晨) | Wang, Bao-Qiang (Wang, Bao-Qiang.) | Unfold

Indexed by:

EI Scopus PKU CSCD

Abstract:

In order to study the sidewall damage of photonic crystal, photonic crystal was fabricated by different ICP etching parameters. With the increasing bias power source. The roughness of sidewall and bottom increased. When C2H4 were added, smooth and steep sidewall of photonic crystal were achieved by optimizing the parameters of ICP at last, and the EBSD analysed the etching damage preliminarily.

Keyword:

Semiconducting gallium Photonic crystals III-V semiconductors Gallium arsenide Etching

Author Community:

  • [ 1 ] [Liu, Ying-Ming]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100124, China
  • [ 2 ] [Xu, Chen]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100124, China
  • [ 3 ] [Wang, Bao-Qiang]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100124, China
  • [ 4 ] [Xie, Yi-Yang]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100124, China
  • [ 5 ] [Shen, Guang-Di]Beijing Optoelectronic Technology Lab., Beijing University of Technology, Beijing 100124, China

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Source :

Journal of Harbin Institute of Technology

ISSN: 0367-6234

Year: 2011

Issue: SUPPL. 1

Volume: 43

Page: 401-404

Cited Count:

WoS CC Cited Count: 0

30 Days PV: 8

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