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LaNiO3 thin films were deposited on Si (100) substrate by pulsed laser deposition(PLD) with different oxygen pressures. X-ray diffraction (XRD) analysis show that the LaNiO3 thin films have highly (100)-oriented by controlling oxygen pressures. Oxygen pressures have a great influence on the crystallinity of the LaNiO3 thin films, and the film has the best crystallinity when the oxygen pressure is 7.5Pa, the stoichiometric ratio of La to Ni element go down as the growing of oxygen pressures, the smallest resistivity of the LaNiO3 thin films is 2.03 × 10-4 Ω · cm, it shows a good conductivity of metallic perovskite oxide; SEM and TEM analysis show that crystal grain of the film is columnar morphology, revealed smooth dense surfaces and very homogeneous grain distribution. Compacted and clearly well-defined grain size can also be observed. RMS of LaNiO3 films is 1.73nm, which could be acceptable for most of the possible applications of LaNiO3, for example as an electrode in ferroelectric(FE) thin films.
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