Surface morphology and electrical properties control of p-InGaN by MOCVD growth temperature to improve LED light power - 文章详情页

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InGaN:Mg　films　have　been　grown　by　metal-organic　chemical　vapor　deposition,　the　surface　morphology　and　electrical　properties　of　the　p-InGaN　are　optimised　by　changing　the　epitaxial　growth　temperature.　The　sample　grown　at　800°C　had　a　lower　resistivity　than　the　other　samples,　hole　concentration　of　the　p-InGaN　is　1.9×1019cm-3,　many　knolls　for　roughen　sample　surface　were　observed　by　atomic　force　microscopy,　its　root-mean-　square　is　highest　in　all　samples.　The　optical　power　of　the　LED　with　roughened　surface　and　optimal　electrical　properties　of　p-InGaN　contact　layer　was　improved　23%.

关键词：

Atomic force microscopy Electric properties Epitaxial films Epitaxial growth Gallium compounds Growth temperature Hole concentration Light emitting diodes Metallorganic chemical vapor deposition Morphology Organic chemicals Organometallics Surface morphology Surface properties Vapor deposition X ray diffraction

作者机构：

[ 1 ] [Han, Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Xing, Yan-Hui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Deng, Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Zhu, Yan-Xu]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Xu, Chen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Shen, Guang-Di]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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