Properties of the InGaN: Mg with roughened surface and high hole concentration and its light-emitting diode application - 文章详情页

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摘要：

InGaN:　Mg　films　were　grown　by　metal-organic　chemical　vapor　deposition　(MOCVD),　and　the　properties　of　InGaN:　Mg　the　materials　with　different　source　fluxes　were　studied.　The　optical　and　electrical　properties　show　that　when　epitaxial　growth　temperature　is　at　760°C,　the　TMIn　molar　flux　is　certain,　the　In　molecomposition　increases　with　the　increase　of　CP2Mg　and　III　family　source　molar　ratio([CP2Mg]/[III]),　and　the　hole　concentration　also　increases　linearly.　When　[CP2Mg]/[III]　is　1.12×10-3,　the　high　hole　concentration　of　4.　78×1019　cm-3　is　obtained.　Moreover,　the　electro-luminescence　intensity　of　the　light-emitting　diodes　(LEDs)　with　InGaN:　Mg　as　contact　layer　is　enhanced　by　28%　compared　with　conventional　LEDs.

关键词：

Atomic force microscopy Diodes Electric properties Epitaxial growth Films Fluxes Gallium compounds Hole concentration Industrial chemicals Light Luminescence Metallorganic chemical vapor deposition Organic chemicals Organic light emitting diodes (OLED) Vapor deposition

作者机构：

[ 1 ] [Xing, Yan-Hui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Han, Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Deng, Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Li, Jian-Jun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Xu, Chen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Shen, Guang-Di]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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xingyanhui@bjut.edu.cn

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