GaN-based　light　emitting　diodes　(LEDs)　with　different　In　contents　in　the　wells　were　fabricated.　The　blue-shift　of　the　LED　which　comes　from　the　quantum　confinement　Stark　effect　(QCSE)　is　observed　when　the　driving　current　rangfes　from　3　mA　to　900　mA.　And　the　blue-shift　of　the　green　LED　is　greater　than　that　of　the　blue　LED　as　the　injection　current　varies,　because　the　greater　In　contents　in　quantum　well　of　green　LED　determines　obvious　quantum　confinement　Stark　effect.　The　luminous　efficiency　is　seriously　reduced　as　the　operation　current　increasing.　These　results　suggest　that　electrons　that　overflow　from　localized　states　to　conduction　band　recombinating　with　misfit　defects　is　the　major　reason　when　the　injection　level　is　not　high.　The　nonuniform　hole　distribution　and　electrons　overflowing　from　active　region　are　the　possible　reasons　for　the　decreased　luminous　efficiency　at　high　level　of　injection　current.　The　luminous　efficiency　of　the　green　LED　decreases　greater　than　the　blue　LED　due　to　the　decreased　vision　function　caused　by　obvious　blue-shift.