Design and thermal analysis of SiGe HBT With composite structure of segmented emitter and non-uniform finger spacing - 文章详情页

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摘要：

A　novel　multi-finger　power　SiGe　heterojunction　bipolar　transistor　(HBT)　with　segmented　emitter　and　non-uniform　finger　spacing　structure　is　proposed　to　improve　thermal　stability　of　HBT.　Thermal　simulation　for　a　ten-finger　power　SiGe　HBT　with　novel　structure　are　conducted　with　ANSYS　software.　Three-dimensional　temperature　distribution　on　emitter　fingers　is　obtained.　Compared　with　traditional　integrity　structure　or　segmented　emitter　and　uniform　finger　spacing　structure,　the　maximum　junction　temperature,　temperature　distribution　and　heat-flux　distribution　are　significantly　improved.　Thermal　stability　is　effectively　enhanced.

关键词：

Heterojunction bipolar transistors Heat flux Heterojunctions Si-Ge alloys Thermoanalysis Thermodynamic stability Computer software Temperature distribution

作者机构：

[ 1 ] [Chen, Liang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Zhang, Wan-Rong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Jin, Dong-Yue]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Xie, Hong-Yun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Hu, Ning]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Xiao, Ying]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Wang, Yang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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