A　novel　ultra-wideband　(UWB)　SiGe　HBT　low　noise　amplifier　(LNA)　with　resistive　feedback　was　designed.　Due　to　absence　of　the　inductor　which　occupies　a　large　chip　area,　the　total　die　area　and　the　fabrication　cost　of　the　amplifier　are　reduced　noticeably.　In　feedback　loops　of　the　novel　amplifier,　compound　distributed　resistors　and　a　DC　capacitor　are　used　instead　of　a　traditional　single　resistor.　In　this　way,　the　output　impedance　matching　of　the　novel　LNA　can　be　improved　greatly　only　by　adjusting　the　resistor　that　is　in　series　with　a　capacitor,　without　sacrificing　of　biasing　conditions.　The　layout　area　of　the　novel　resistive　feedback　LNA　is　only　0.144　mm2.　The　simulation　results　indicate　that,　in　the　band　of　3.1-10　GHz,　the　novel　UWB　LNA　achieves　the　low　noise　figure　(NF)　of　less　than　4.5　dB,　the　gain　of　as　high　as　27　dB　with　variation　of　only　1.032　dB,　the　voltage　standing　wave　radio　of　less　than　1.637　and　the　stability　factor　of　more　than　2.3.　The　results　are　of　great　practical　importance,　because　they　provide　a　guide　for　the　design　and　development　of　the　low-cost　and　high　performance　monolithic　UWB　LNA.