The aging characteristics of high-power GaN-based white light-emitting diodes - 文章详情页

作者：

Zhou, Zhou (Zhou, Zhou.) | Feng, Shi-Wei (Feng, Shi-Wei.) (学者：冯士维) | Zhang, Guang-Chen (Zhang, Guang-Chen.) | Guo, Chun-Sheng (Guo, Chun-Sheng.) | Li, Jing-Wan (Li, Jing-Wan.)

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摘要：

Accelerated　aging　test　at　the　temperature　of　85°C　were　carried　out　on　high-power　GaN-based　white　light-emitting　diodes.　The　degradation　of　main　performance　parameters　was　investigated.　After　6　500　h,　the　luminous　flux　rate　of　the　samples　was　declined　about　28%　to　33%.　Series　resistance　and　reverse　leakage　current　increased　with　the　aging　time,　which　were　caused　by　the　degradation　of　ohmic　contact　and　the　increase　of　the　defect　density,　respectively.　The　thermal　resistance　components　of　LEDs　increased　gradually.　Based　on　the　C-SAM　measurement,　some　voids　appeared　in　the　die　attach.　The　experiment　results　suggested　that　the　degradation　both　in　chip　and　packaging　lead　to　the　invalidation　devices.

关键词：

Electric resistance Failure analysis Gallium nitride Heat resistance III-V semiconductors Light emitting diodes Ohmic contacts Testing

作者机构：

[ 1 ] [Zhou, Zhou]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Feng, Shi-Wei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Zhang, Guang-Chen]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Guo, Chun-Sheng]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Li, Jing-Wan]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

通讯作者信息：

电子邮件地址：

shwfeng@bjut.edu.cn

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