Calculation of band structure of InGaAs/GaAs strained quantum wells - 文章详情页

作者：

Song, Yan-Rong (Song, Yan-Rong.) (学者：宋晏蓉) | Hua, Ling-Ling (Hua, Ling-Ling.) | Zhang, Peng (Zhang, Peng.) | Zhang, Xiao (Zhang, Xiao.)

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摘要：

In　order　to　further　optimize　the　performance　of　semiconductor　lasers,　the　band　structure　which　influences　many　parameters　of　semiconductor　lasers　is　discussed.　Taking　the　InGaAs/GaAs　strained　quantum　wells　for　an　example,　we　obtain　the　conduction-band　structures　and　the　valence-band　structures　by　using　the　finite　difference　method　to　solve　the　problem　of　6×6　Luttinger-Kohn　Hamiltonian　which　is　considered　the　valence　band　mixing　effect.　The　results　show　that　the　strain　has　changed　the　huge　asymmetry　between　the　light　conduction　band　effective　mass　and　the　very　heavy　valence　band　effective　mass　in　the　traditional　unstrained　quantum　well　lasers.　It　is　more　conducive　to　improving　the　laser　performance.

关键词：

Band structure Conduction bands Finite difference method Gallium compounds Hamiltonians Plants (botany) Quantum well lasers Semiconducting indium Semiconducting indium gallium arsenide Semiconductor quantum wells Valence bands

作者机构：

[ 1 ] [Song, Yan-Rong]College of Applied Sciences, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Hua, Ling-Ling]College of Applied Sciences, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Hua, Ling-Ling]Basis Department, North China Institute of Science and Technology, Yanjiao 101601, Hebei, China
[ 4 ] [Zhang, Peng]College of Applied Sciences, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Zhang, Xiao]College of Applied Sciences, Beijing University of Technology, Beijing 100124, China

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